Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities

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Abstract
A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of the n=2 subband peak is useful for characterizing high carrier densities.