Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures
- 30 June 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (6) , 733-736
- https://doi.org/10.1016/0038-1101(90)90186-i
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Compensation mechanisms in n+-GaAs doped with sulphurJournal of Crystal Growth, 1989
- Non-destructive lifetime measurement in silicon wafers by microwave reflectionSolid-State Electronics, 1987