Non-destructive lifetime measurement in silicon wafers by microwave reflection
- 1 February 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (2) , 195-203
- https://doi.org/10.1016/0038-1101(87)90149-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Determination of the denuded zone in Czochralski-grown silicon wafers through MOS lifetime profilingIEEE Transactions on Electron Devices, 1985
- A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon WaferJapanese Journal of Applied Physics, 1979
- A New Fast Technique for Large‐Scale Measurements of Generation Lifetime in SemiconductorsJournal of the Electrochemical Society, 1976
- Observation of turn-on action in a gate-triggered thyristor using a new microwave techniqueIEEE Transactions on Electron Devices, 1973
- Further Consideration of Bulk Lifetime Measurement with a Microwave Electrodeless TechniqueProceedings of the IRE, 1960