Ultraviolet photoelectron investigation of Si(111)/Au interface at high temperatures
- 1 February 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 33 (8) , 881-884
- https://doi.org/10.1016/0038-1098(80)91209-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- LEED-AES study of the AuSi(100) systemSurface Science, 1979
- Electronic behavior in alloys: Gold-non-transition-metal intermetallicsPhysical Review B, 1979
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiationPhysical Review B, 1978
- Investigation of solid–solid reactions of Au films on siliconPhysica Status Solidi (a), 1978
- New phenomena in Schottky barrier formation on III–V compoundsJournal of Vacuum Science and Technology, 1978
- Isothermal desorption spectroscopy for the study of two-dimensional condensed phases: Investigation of the Au (deposit)/Si(111) (substrate) system; application to the Xe/(0001)graphite systemSurface Science, 1977
- Effects of radiation on gold diffusion in siliconPhysica Status Solidi (a), 1976
- Formation, structure, and orientation of gold silicide on gold surfacesJournal of Applied Physics, 1976
- Electronic Behavior in Alloys: Au-SnPhysical Review B, 1973
- Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering TechniquesJournal of Vacuum Science and Technology, 1972