InP HEMT and HBT applications beyond 200 GHz
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW's InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.Keywords
This publication has 6 references indexed in Scilit:
- Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequencyIEEE Electron Device Letters, 2001
- Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBTIEEE Electron Device Letters, 2001
- InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTsIEEE Transactions on Electron Devices, 2001
- High-gain 150-215-GHz MMIC amplifier with integral waveguide transitionsIEEE Microwave and Guided Wave Letters, 1999
- 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/IEEE Electron Device Letters, 1994
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992