“MBE-Like” and “CVD-like” atomic layer epitaxy of ZnSe in mombe system
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 86-90
- https://doi.org/10.1016/0022-0248(90)90942-e
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 5 references indexed in Scilit:
- Atomic layer epitaxy of ZnSe-ZnTe strained layer superlatticesJournal of Crystal Growth, 1989
- A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactantsJournal of Crystal Growth, 1989
- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs SubstratesJapanese Journal of Applied Physics, 1986
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978