Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors
- 7 March 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (10) , 1230-1232
- https://doi.org/10.1063/1.110848
Abstract
Electron transport in GaAs‐based p‐i‐n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as Vd=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.Keywords
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