The Schottky barrier height and Auger studies of yttrium and yttrium silicide on silicon
- 1 November 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (11) , 6647-6650
- https://doi.org/10.1063/1.328656
Abstract
Schottky barrier diodes of yttrium and yttrium silicide were fabricated on p‐type (111) silicon. The barrier heights of the diodes determined by I‐V measurements were correlated with heat treatments and interface conditions as determined by Auger composition depth profiles. The as‐deposited Y‐Si contact had a barrier height of 0.70 eV. During heat treatment at 300 °C, oxygen diffused into yttrium and formed Y2O3, resulting in a barrier height of 0.65 eV. Yttrium silicide was formed at 410 °C that lead to a Schottky barrier height of 0.60 eV.This publication has 6 references indexed in Scilit:
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