The effect of conduction band non-parabolicity on inter-sub-band absorption in doped quantum wells
- 1 August 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (8) , 786-790
- https://doi.org/10.1088/0268-1242/3/8/009
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric fieldIEEE Journal of Quantum Electronics, 1987
- Possibility of optical bistability due to resonant intersubband excitation in stepped modulation-doped quantum wellsApplied Physics Letters, 1987
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Intersubband optical absorption in a quantum well with an applied electric fieldPhysical Review B, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Fast relaxing absorptive nonlinear refraction in superlatticesApplied Physics Letters, 1983
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974