On the effective carrier lifetime of a silicon p–i–n diode optical modulator
- 12 May 2008
- journal article
- research article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 23 (6)
- https://doi.org/10.1088/0268-1242/23/6/064006
Abstract
A Si waveguide integrated with a lateral p-i-n diode forms a popular optical amplitude and a phase modulator. Three experimental techniques were introduced to measure the effective carrier lifetime in the Si modulator: the static optical absorption method, the reverse recovery method and the transient optical absorption method. A simple theoretical model was established to estimate the effective carrier lifetime in the Si modulator from its geometry.Keywords
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