Fabrication of free-standing single-crystal silicon wires
- 7 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (10) , 834-835
- https://doi.org/10.1063/1.99299
Abstract
A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 μm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabrictaed in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.Keywords
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