DX centers in Al0.34Ga0.66As amorphous thin films
- 6 September 1993
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 87 (9) , 787-790
- https://doi.org/10.1016/0038-1098(93)90414-i
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Lattice relaxed impurity and persistent photoconductivity in nitrogen doped 6H-SiCApplied Physics Letters, 1992
- Relaxation of persistent photoconductivity inAsPhysical Review B, 1990
- Identification of defects in amorphous siliconPhysical Review Letters, 1990
- Percolation transition of persistent photoconductivity in II-VI mixed crystalsPhysical Review Letters, 1990
- Persistent photoconductivity and related critical phenomena inSePhysical Review B, 1989
- Theory of theDXcenter inAs and GaAs crystalsPhysical Review B, 1986
- Persistent Photoconductivity in Doping-Modulated Amorphous SemiconductorsPhysical Review Letters, 1984
- Multiphonon, non-radiative transition rate for electrons in semiconductors and insulatorsJournal of Physics C: Solid State Physics, 1978
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977
- Long-lifetime photoconductivity effect in n-type GaAlAsApplied Physics Letters, 1977