Relaxation of persistent photoconductivity inAs
- 15 September 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (9) , 5855-5858
- https://doi.org/10.1103/physrevb.42.5855
Abstract
Stretched-exponential decay of persistent photoconductivity (PPC) has been observed in As in the temperature region T<90 K. The decay time constant and exponent have been measured at different temperatures. Experimental results show that the thermal activated capture of electrons at the DX centers becomes negligible at T<40 K. However, a transition from a thermally activated to a nearly-temperature-independent tunneling capture at a temperature on the order of 40 K has been observed for the first time for As, which is consistent with the multiphonon-emission model for DX centers of large lattice relaxation.
Keywords
This publication has 23 references indexed in Scilit:
- Electron trapping by metastable effective-mass states of DX donors in indirect-band-gap As:TePhysical Review B, 1989
- Magnetic studies of persistent photoconductivity inn-AsPhysical Review Letters, 1989
- Electron-paramagnetic-resonance study of the SnDXcenter in direct-gapAsPhysical Review B, 1989
- Energetics ofDX-center formation in GaAs andAs alloysPhysical Review B, 1989
- Electron-paramagnetic-resonance measurements of Si-donor-related levels in AsPhysical Review B, 1989
- Theory of the Atomic and Electronic Structure ofCenters in GaAs andAlloysPhysical Review Letters, 1988
- Investigation of theDXcenter in heavily dopedn-GaAsPhysical Review Letters, 1987
- Photoconductivity storage in Ga1−xAlxAs alloys at low temperaturesSolid-State Electronics, 1982
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977