Magnetic studies of persistent photoconductivity inn-As
- 18 September 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (12) , 1311-1314
- https://doi.org/10.1103/physrevlett.63.1311
Abstract
Low-temperature magnetic susceptibility measurements were made during illumination of n- As with DX centers to investigate the microscopic origin of persistent photoconductivity. Experiments using a dc SQUID magneto-optic microsusceptometer revealed the change of electronic susceptibility as a function of illumination time and temperature. The results indicate that the DX center is a paramagnetic donor with one unpaired electron.
Keywords
This publication has 15 references indexed in Scilit:
- Chadi, Chang, and Walukiewicz replyPhysical Review Letters, 1989
- Evidence against the negative-charge-state model for theDXcenter inn-type GaAsPhysical Review Letters, 1989
- Low-noise modular microsusceptometer using nearly quantum limited dc SQUIDsApplied Physics Letters, 1988
- Theory of the Atomic and Electronic Structure ofCenters in GaAs andAlloysPhysical Review Letters, 1988
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Piezoresistance and Magnetic Susceptibility in Heavily Dopedn-Type SiliconJournal of the Physics Society Japan, 1968
- Effect of Te and S Donor Levels on the Properties ofnear the Direct-Indirect TransitionPhysical Review B, 1968
- Magnetism of Interacting DonorsPhysical Review B, 1960
- Magnetic Properties of-Type SiliconPhysical Review B, 1958