Deep center photoluminescence study of low-temperature InP grown by molecular beam epitaxy

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Abstract
Low-temperature grown (130–480 °C) InP was investigated using photoluminescence spectroscopy with changes of excitation intensity and temperature. Two deep broad photoluminescence bands at ∼0.8 and 1.06 eV are present in undoped and Be-doped materials, and their formation strongly depends on the growth temperature. PIn and VIn related centers are associated with the transitions at 0.8 and 1.06 eV bands via the deep donor PIn–Be acceptor pair and the conduction band-to-VIn acceptor transitions, respectively. A configuration coordinate model is used to locate the deep donor and acceptor levels.