Electrical properties of InP grown by gas-source molecular beam epitaxy at low temperature
- 27 April 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (17) , 2104-2106
- https://doi.org/10.1063/1.107103
Abstract
InP grown by gas-source molecular beam epitaxy at low temperature has been studied by Hall effect and admittance spectroscopy measurements. Contrary to GaAs, InP grown at low temperature is n-type and has low resistivity. The electron concentration of InP increases dramatically with decreasing growth temperature. A deep level at Ec−ED=320±50 meV is found to be the dominant donor in InP grown at low temperature.Keywords
This publication has 11 references indexed in Scilit:
- Electrical and optical characterization of gas source and solid source MBE low temperature buffersJournal of Crystal Growth, 1991
- Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayersApplied Physics Letters, 1991
- Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxyApplied Physics Letters, 1991
- Growth of InAs on GaAs (001) by migration-enhanced epitaxyPublished by SPIE-Intl Soc Optical Eng ,1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989
- Picosecond GaAs-based photoconductive optoelectronic detectorsApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Determination of theantisite structure in InP by optically detected electron-nuclear double resonancePhysical Review B, 1987
- Electron paramagnetic resonance identification of the phosphorus antisite in electron-irradiated InPApplied Physics Letters, 1984
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975