Electrical Properties of Gallium Manganese Antimonide: a New Diluted Magnetic Semiconductor
- 1 August 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (8R)
- https://doi.org/10.1143/jjap.33.4581
Abstract
Ga1- x Mn x Sb, a ternary diluted magnetic semiconductor (DMS) alloy was newly synthesised with different Mn concentrations (x=0.0048, 0.01, 0.05 and 0.14) using Bridgman growth technique. The stoichiometry and the composition were verified by the electron probe microanalysis and X-ray diffraction analysis. At room temperature electrical parameters like resistivity, Hall co-efficient, carrier concentration and mobility were determined. The variations of resistivity and Hall co-efficient with temperature were studied and it was found that the alloy was degenerate in nature.Keywords
This publication has 5 references indexed in Scilit:
- Bulk growth, composition and morphology of gallium manganese antimonide — a new ternary alloy systemJournal of Alloys and Compounds, 1994
- New III-V diluted magnetic semiconductors (invited)Journal of Applied Physics, 1991
- Epitaxy of III–V diluted magnetic semiconductor materialsJournal of Vacuum Science & Technology B, 1990
- Diluted magnetic semiconductorsJournal of Applied Physics, 1988
- Semimagnetic semiconductorsAdvances in Physics, 1984