Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Bombarding effects by ionized cluster beamsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Al surface mobility on Si(111) during initial stages of ionized cluster beam depositionJournal of Vacuum Science & Technology A, 1988
- Formation mechanism of large clusters from vaporized solid materialThe Journal of Physical Chemistry, 1987
- Metallization by ionized cluster beam depositionIEEE Transactions on Electron Devices, 1987
- Initial formation process of metal/silicon interfacesSurface Science, 1986
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984