Plasma diagnostics of the high pressure oxygen-sputtering process
- 15 March 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 224 (2) , 137-140
- https://doi.org/10.1016/0040-6090(93)90423-m
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Effect of deposition parameters on the structural properties and Tc of YBaCuO films by high pressure oxygen sputteringPhysica C: Superconductivity and its Applications, 1992
- Reliable single-target sputtering process for high-temperature superconducting films and devicesApplied Physics Letters, 1988
- Direct production of crystalline superconducting thin films of YBa2Cu3O7 by high-pressure oxygen sputteringSolid State Communications, 1988
- The influence of N2 partial pressure and substrate bias on electron density and temperature in a dc sputtering diodeVacuum, 1987
- Epitaxial ordering of oxide superconductor thin films on (100) SrTiO3 prepared by pulsed laser evaporationApplied Physics Letters, 1987
- Charge transport in magnetronsJournal of Vacuum Science & Technology A, 1987
- Langmuir probe technique for plasma parameter measurement in a medium density dischargeReview of Scientific Instruments, 1986
- Plasma diagnostics in ion-assisted physical vapour deposition systemsVacuum, 1984
- Plasma characterization in sputtering processes using the Langmuir probe techniqueThin Solid Films, 1980
- Measurement of plasma discharge characteristics for sputtering applicationsJournal of Vacuum Science and Technology, 1978