Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S) , 462-465
- https://doi.org/10.1143/jjap.33.462
Abstract
The etching process for a Cu interconnect with self-aligned deposition of a thick sidewall film has been developed. This sidewall film acts as a barrier layer to prevent Cu from corrosion and oxidation during the subsequent process, such as formation of a passivation film. Using this etching process, the Cu interconnect of a TiN/Cu/TiN multilayered structure in a submicron feature is formed. Resistivity for the Cu interconnects is about 2 µ Ω ·cm, and it does not change on annealing up to 700° C. Diffusion of impurities into Cu is not observed up to 800° C annealing. Therefore, the structure of the Cu interconnect, that is, Cu covered with TiN and the thick sidewall film, is suitable for the ULSI process.Keywords
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