Characteristics of interfaces for sputter deposited Bi2Sr2Ca1Cu2Ox/Bi2Sr2Cu1Oy/Bi2Sr2Ca1Cu2Oz structure
- 11 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (6) , 640-642
- https://doi.org/10.1063/1.104554
Abstract
A depth profile of an Auger electron spectroscopy (AES) for a Bi2Sr2Ca1Cu2Ox/Bi2Sr2Cu1Oy/Bi2Sr2Ca1Cu2Oz structure was investigated. This multilayered structure was fabricated by an in situ sputtering process and used for sandwich‐type Josephson junctions. A little diffusion of Ca atoms from a top layer into the Bi2Sr2Cu1Oy layer was observed. It was confirmed that selective sputter etching during the AES measurement did not occur so seriously. The transition width at the two interfaces was estimated as about 10 nm, which was close to the depth resolution of our AES measurement. In addition, the interdiffusion between a Bi‐based oxide film and a MgO substrate was hardly observed.Keywords
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