Epitaxial Growth of Highly Crystalline and Conductive Nitride Films by Pulsed Laser Deposition
- 1 November 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (11R)
- https://doi.org/10.1143/jjap.33.6308
Abstract
KrF pulsed excimer laser deposition was found to produce epitaxial TiN and ZrN films on Si{100} and MgO{100} substrates, respectively, with optimized laser fluence, substrate temperature and nitrogen ambient pressure. The epitaxial nature of these films was confirmed by the X-ray pole figure, and the crystallinity was evaluated from the full width at half-maximum of the X-ray ω-rocking curve and Rutherford backscattering spectroscopy. The electrical resistivities of these epitaxial TiN and ZrN films were as low as 40 µ Ω cm. The crystal orientation and impurity phase formation are discussed based on a thermodynamic consideration.Keywords
This publication has 9 references indexed in Scilit:
- Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor depositionApplied Physics Letters, 1992
- Bias Effect on the Microstructure and Diffusion Barrier Capability of Sputtered TiN and TiOxNy FilmsJapanese Journal of Applied Physics, 1992
- Low-temperature preparation of high T c superconducting thin filmsApplied Physics Letters, 1988
- Titanium Nitride Crystal Growth with Preferred Orientation by Dynamic Mixing MethodJapanese Journal of Applied Physics, 1987
- Properties of Superconducting ZrN Thin Films Deposited by dc Reactive Magnetron SputteringJapanese Journal of Applied Physics, 1987
- Investigation of reactively sputtered TiN films for diffusion barriersThin Solid Films, 1986
- Optical constants and spectral selectivity of titanium carbonitridesThin Solid Films, 1982
- TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devicesApplied Physics Letters, 1980
- Internal stresses in sputtered chromiumThin Solid Films, 1977