Constraints in p-channel device engineering for submicron CMOS technologies
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Vertical isolation in shallow n-well CMOS circuitsIEEE Electron Device Letters, 1987
- Design tradeoffs between surface and buried-channel FET'sIEEE Transactions on Electron Devices, 1985