Investigation of the C-V behaviour of GaAs-metal and GaAs-electrolyte contacts under forward bias

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Abstract
The electrical characteristics of GaAs-metal and GaAs-electrolyte Schottky barrier diodes have been studied as a function of applied voltage and of frequency, using conventional Schottky barrier C-V analysis and I-V measurements. For forward voltages approaching the flat-band voltage, i.e. the diffusion voltage, the measured capacitance deviates from a linear C-2 versus V dependence, i.e. the C-2 value drops steeply and a 'knee' in the Mott-Schottky plot is observed. This effect is found for the equivalent series capacitance Cs as well as for the equivalent parallel capacitance Cp, but in a different voltage range. The 'knee' in the Cp-2 versus V and in the Cs-2 versus V plots is explained. The difference between these two plots is attributed to the forward current.