Ga delta-doping layers in silicon
- 16 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1461-1463
- https://doi.org/10.1063/1.105288
Abstract
Delta-doping layers in silicon have been made by deposition of 0.39 monolayer Ga on Si(001). The dopant atoms have been buried in the host crystal using a solid phase epitaxial growth method. The grown structures are characterized in situ by high-resolution Rutherford backscattering spectrometry. A fraction of 30% of the Ga atoms is located at subsitutional sites in a spike less than 1.0 nm wide; the other atoms are at the surface. The surface atoms desorb upon annealing at 985 K, whereas the buried atoms are redistributed only slightly. At temperatures higher than 1100 K the profile degrades completely.Keywords
This publication has 12 references indexed in Scilit:
- Low-temperature Si molecular beam epitaxy: Solution to the doping problemApplied Physics Letters, 1990
- Growth and characterization of atomic layer doping structures in SiJournal of Applied Physics, 1989
- Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-StructuresMRS Proceedings, 1989
- MBE-Related Surface Segregation of Dopant Atoms in SiliconJapanese Journal of Applied Physics, 1988
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988
- A system for MBE growth and high-resolution RBS analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Laser probing of gallium atom interactions with silicon(100) surfacesJournal of Vacuum Science & Technology B, 1987
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985
- Radiative electron-hole recombination in a new sawtooth semiconductor superlattice grown by molecular-beam epitaxyPhysical Review B, 1985
- Model for solute redistribution during rapid solidificationJournal of Applied Physics, 1982