Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-Structures

This publication has 8 references indexed in Scilit:

• Observation of a two-dimensional hole gas in boron-doped Si0.5Ge0.5/Ge heterostructures
  Applied Physics Letters, 1989
• Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
  IEEE Electron Device Letters, 1988
• Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
  Applied Physics Letters, 1988
• Indirect band gap and band alignment for coherently strained ${\mathrm{Si}}_{\mathrm{x}}$${\mathrm{Ge}}_{1\mathrm{-}\mathrm{x}}$ bulk alloys on germanium (001) substrates
  Physical Review B, 1986
• Enhancement- and depletion-mode p-channel Ge_xSi_1-xmodulation-doped FET's
  IEEE Electron Device Letters, 1986
• The n-channel SiGe/Si modulation-doped field-effect transistor
  IEEE Transactions on Electron Devices, 1986
• Modulation doping in GexSi1−x/Si strained layer heterostructures
  Applied Physics Letters, 1984
• Raman scattering from GexSi1−x/Si strained-layer superlattices
  Applied Physics Letters, 1984