Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?
- 14 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (20) , 1917-1919
- https://doi.org/10.1063/1.100344
Abstract
A simplified five-species nonequilibrium kinetic model for phosphorus diffusion in silicon is presented. The resulting system of evolution equations is of a simple reaction-diffusion form with constant diffusivities. Using first-order thermodynamic estimates for reaction rates, the phosphorus profile after a 10 min predeposition shows the expected tail. However, only when the bimolecular generation-recombination rate is significantly increased does a kink-plateau result. This suggests that recombination may be the dominant factor in producing the known nonlinearity.Keywords
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