Model for defect-impurity pair diffusion in silicon
- 2 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1439-1441
- https://doi.org/10.1063/1.98650
Abstract
A new model for impurity diffusion in silicon by a point defect-impurity pair mechanism is described. A pair of coupled, nonlinear, partial differential equations for the silicon self-interstitial and the impurity is derived and solved numerically. The familiar kink and tail of phosphorus and, to a lesser extent, boron diffused profiles arise naturally from the solution. The coupling between defect and impurity becomes smaller at high temperatures and at low impurity concentrations, in agreement with experimental observations. The transient buildup of the defect concentration may have implications for models of rapid thermal processes.Keywords
This publication has 16 references indexed in Scilit:
- Observation of silicon self-interstitial supersaturation during phosphorus diffusion from growth and shrinkage of oxidation-induced stacking faultsJournal of Applied Physics, 1986
- Analytical Model for Phosphorus Diffusion in SiliconJournal of the Electrochemical Society, 1986
- Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self-interstitial phenomenaApplied Physics Letters, 1986
- Dopant diffusion in silicon: A consistent view involving nonequilibrium defectsJournal of Applied Physics, 1984
- Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in siliconApplied Physics Letters, 1984
- Silicon self-interstitial supersaturation during phosphorus diffusionApplied Physics Letters, 1983
- Concentration Dependence of the Diffusion Coefficient of Boron in SiliconJapanese Journal of Applied Physics, 1980
- Numerical Solution of Phosphorus Diffusion Equation in SiliconJapanese Journal of Applied Physics, 1979
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- On the nature of the kink in the carrier profile for phosphorus-diffused layers in siliconApplied Physics Letters, 1972