Imaging of high field regions in semi-insulating GaAs under bias
- 1 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 28 (1-3) , 485-487
- https://doi.org/10.1016/0921-5107(94)90111-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrical transients in high resistivity gallium arsenideSolid-State Electronics, 1964
- Optical Absorption Edge in GaAs and Its Dependence on Electric FieldJournal of Applied Physics, 1961
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958