On -radiation and electron beam dose and gate oxide thickness dependence of radiation defects in MOS capacitors
- 16 June 1986
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (2) , K203-K206
- https://doi.org/10.1002/pssa.2210950269
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Technical Method of Determination of the Interface Trap DensityPhysica Status Solidi (a), 1985
- Radiation effects on thin-oxide MOS capacitors caused by electron beam evaporation of aluminumSolid-State Electronics, 1983
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- MOS Hardness Characterization and Its Dependence upon Some Process and Measurement VariablesIEEE Transactions on Nuclear Science, 1976
- Hole traps in silicon dioxideJournal of Applied Physics, 1976