Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
- 14 March 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (6) , 277-278
- https://doi.org/10.1049/el:20020207
Abstract
The high demand for 1.3–1.55 µm lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane lasers operating out to 1.49 µm, with threshold current density of 930 A/cm2 per quantum well and pulsed power up to 70 mW, are presented. In addition, photoluminescence out to 1.6 µm from GaInNAsSb quantum wells was observed.Keywords
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