Acceptor energy level for Zn in Ga1−xAlxAs

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Abstract
Electrical properties and the acceptor energy level in Zn‐doped p‐Ga1−xAlxAs (0<xp‐Ga1−xAlxAs layer, Zn diffuses from Zn‐doped Ga‐Al‐As melt into the undoped n‐GaAs substrate to form the p‐GaAs region. The modified van der Pauw method proposed by Petritz was used to measure the electrical properties of p‐ (GaAl)As and p‐GaAs. The resistivity and the hole concentration of Zn‐doped p‐Ga1−xAlxAs were found to be strongly affected by the acceptor energy level for Zn. The acceptor energy level in Zn‐doped p‐Ga1−xAlxAs was found to increase from 15 meV for x=0 to 90 meV for x=0.85. The increase of the acceptor energy level with increasing x has been theoretically explained by the modified hydrogenic model proposed by Baldereschi and Lipari.

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