on GaAs grown by molecular beam epitaxy
- 2 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 94-98
- https://doi.org/10.1016/0022-0248(95)00856-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Microstructure and pseudomorphism in molecular beam epitaxially grown ZnCdS on GaAs(001)Applied Physics Letters, 1993
- Strained-layer interfaces between II–VI compound semiconductorsJournal of Vacuum Science & Technology B, 1988
- Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and SuperlatticesPhysica Status Solidi (b), 1988
- The Si/GaAs (110) heterojunction: Strain, disorder, and valence-band discontinuityJournal of Vacuum Science & Technology B, 1987
- Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopyPhysical Review B, 1983
- The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1983