Microstructure and pseudomorphism in molecular beam epitaxially grown ZnCdS on GaAs(001)
- 11 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (15) , 2129-2131
- https://doi.org/10.1063/1.110562
Abstract
We have carried out an electron‐microscopy‐based microstructural study of molecular beam epitaxially grown ZnxCd1−xS epilayers on GaAs(001) substrates. We find that sulfur attacks bare GaAs substrates, resulting in pits that act as nucleating centers for defects that propagate into the epilayer. Such pitting may be avoided by capping the GaAs substrate with a ZnSe buffer in a sulfur‐free separate growth chamber. We also investigate the pseudomorphic zinc blende to wurtzite crystal structure change in epitaxial ZnxCd1−xS and propose a microstructural model for this structural transition.Keywords
This publication has 9 references indexed in Scilit:
- ZnSe/ZnMgSSe blue laser diodeElectronics Letters, 1992
- Low temperature metalorganic vapor phase epitaxial growth of CdxZn1−xS on GaAsJournal of Crystal Growth, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Hall mobility and conductivity in ZnxCd1-xS mixed crystalsJournal of Crystal Growth, 1990
- Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrateJournal of Crystal Growth, 1990
- Cubic ZnCdS Lattice-Matched to GaAs: A Novel Material for Short-Wavelength Optoelectronic ApplicationsJapanese Journal of Applied Physics, 1989
- Structural transitions in epitaxial overlayersJournal de Physique, 1986
- A theory of pseudomorphism in thin filmsMaterials Science and Engineering, 1969