Low temperature metalorganic vapor phase epitaxial growth of CdxZn1−xS on GaAs
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 119-124
- https://doi.org/10.1016/0022-0248(92)90728-2
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Properties of Zn1−xCdxS ternary and Zn1−xCdxS1−ySey quaternary thin films on GaAs grown by OMVPEJournal of Crystal Growth, 1991
- MOVPE growth of wide bandgap II–VI materialsJournal of Crystal Growth, 1991
- Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrateJournal of Crystal Growth, 1990
- Growth and properties of Zn1−Cd S films on GaAs by low-pressure MOVPEJournal of Crystal Growth, 1990
- Growth of epitaxial and highly oriented thin films of cadmium and cadmium zinc sulfide by low-pressure metalorganic chemical vapour deposition using diethyldithiocarbamatesJournal of Crystal Growth, 1989
- Cubic ZnCdS Lattice-Matched to GaAs: A Novel Material for Short-Wavelength Optoelectronic ApplicationsJapanese Journal of Applied Physics, 1989
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD MethodJapanese Journal of Applied Physics, 1988
- Materials growth and its impact on devices from wide band gap II–VI compoundsJournal of Crystal Growth, 1988
- MOVPE growth of CdxZn1-xSJournal of Crystal Growth, 1985
- The MOCVD growth of ZnSe using Me2Zn, H2Se and SeEt2Journal of Crystal Growth, 1984