MOVPE growth of wide bandgap II–VI materials
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 637-643
- https://doi.org/10.1016/0022-0248(91)90533-b
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnSJapanese Journal of Applied Physics, 1990
- p-type carrier concentration control in lithium-doped zinc selenide grown by MOCVDJournal of Crystal Growth, 1990
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPEJapanese Journal of Applied Physics, 1989
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaP SubstratesJapanese Journal of Applied Physics, 1989
- Effects of lattice-matching on doping characteristics of ZnSxSe1−x epitaxial layers on GaAs substrates grown by OMVPEJournal of Crystal Growth, 1989
- MOCVD Growth and Doping of ZnSe and Related II-VI MaterialsMRS Proceedings, 1989
- MOVPE growth and characterization of I-III-VI2 Chalcopyrite compoundsJournal of Crystal Growth, 1988
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVDJapanese Journal of Applied Physics, 1988
- Low resistivity Al-doped ZnS grown by MOVPEJournal of Crystal Growth, 1986
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985