Effects of lattice-matching on doping characteristics of ZnSxSe1−x epitaxial layers on GaAs substrates grown by OMVPE
- 31 January 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (1) , 102-108
- https://doi.org/10.1016/0022-0248(89)90608-8
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education (63604010)
This publication has 14 references indexed in Scilit:
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- MBE growth of high quality lattice-matched ZnSxSe1-x on GaAs substratesJournal of Crystal Growth, 1988
- Superiority of group VII elements over group III elements as donor dopants in MOCVD ZnSeJournal of Crystal Growth, 1988
- The dependence on growth temperature of the photoluminescence properties of nitrogen-doped ZnSe grown by MOCVDJournal of Crystal Growth, 1988
- OMVPE of Zn-based II–IV semiconductors using methylmercaptan as a novel sulfur sourceJournal of Crystal Growth, 1988
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Growth of Zinc Sulfo-Selenide Single Crystals and Their Near Band-Edge PhotoluminescenceJapanese Journal of Applied Physics, 1983
- Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting DiodesJapanese Journal of Applied Physics, 1982