Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrate
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 437-440
- https://doi.org/10.1016/0022-0248(90)90559-4
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- Cubic ZnCdS Lattice-Matched to GaAs: A Novel Material for Short-Wavelength Optoelectronic ApplicationsJapanese Journal of Applied Physics, 1989
- Effects of lattice-matching on doping characteristics of ZnSxSe1−x epitaxial layers on GaAs substrates grown by OMVPEJournal of Crystal Growth, 1989
- Thermodynamic analysis of the MOVPE growth processJournal of Crystal Growth, 1986
- Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductorsJournal of Crystal Growth, 1986
- MOVPE growth of CdxZn1-xSJournal of Crystal Growth, 1985
- Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionIEEE Journal of Quantum Electronics, 1979