Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions
- 25 February 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (8)
- https://doi.org/10.1063/1.2841703
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free LayerJapanese Journal of Applied Physics, 2006
- Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junctionJournal of Applied Physics, 2006
- Spin transfer experiments on tunnel junctionsPhysical Review B, 2006
- Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriersApplied Physics Letters, 2005
- Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductorsPhysical Review B, 2005
- Time-Domain Measurements of Nanomagnet Dynamics Driven by Spin-Transfer TorquesScience, 2005
- Current-Induced Switching of Domains in Magnetic Multilayer DevicesScience, 1999
- Current-driven magnetic switching in manganite trilayer junctionsJournal of Magnetism and Magnetic Materials, 1999
- Emission of spin waves by a magnetic multilayer traversed by a currentPhysical Review B, 1996
- Current-driven excitation of magnetic multilayersJournal of Magnetism and Magnetic Materials, 1996