Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

Abstract
We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)AsGaAs(Ga,Mn)As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10to1000μs . The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.