Metalorganic chemical vapor deposition of anatase titanium dioxide on Si: Modifying the interface by pre-oxidation
- 20 April 2003
- journal article
- Published by Elsevier in Surface Science
- Vol. 530 (1-2) , 63-70
- https://doi.org/10.1016/s0039-6028(03)00386-8
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Enhancing the surface passivation of TiO2 coated silicon wafersApplied Physics Letters, 2002
- Improved n-Si/oxide junctions for environmentally safe solar energy conversionSolar Energy Materials and Solar Cells, 2002
- Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline FilmsJournal of the American Chemical Society, 1999
- Titanium dioxide (TiO2)-based gate insulatorsIBM Journal of Research and Development, 1999
- Low Temperature CVD of Crystalline Titanium Dioxide Films Using Tetranitratotitanium(IVChemical Vapor Deposition, 1998
- MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectricsIEEE Transactions on Electron Devices, 1997
- Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambientsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin filmsJournal of Materials Research, 1991
- Front surface passivation of silicon solar cells with antireflection coatingJournal of Applied Physics, 1987
- Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low TemperaturesJapanese Journal of Applied Physics, 1986