The radiation damage in high-dose argon-implanted silicon

1 January 1983

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 76 (5) , 157-161
https://doi.org/10.1080/01422448308209655

Abstract

Measurements of the depth profiles of disorder produced in silicon by argon ions implanted at energies of 20-300 keV and with a fluence of 10¹⁶ to 10¹⁷/cm² were made by profiling the oxide growth rate.

Keywords

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