Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC
- 1 February 2000
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (2) , 283-286
- https://doi.org/10.1016/s0026-2714(99)00234-6
Abstract
No abstract availableKeywords
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