Reliability issues of MOS and bipolar ICs
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 438-442
- https://doi.org/10.1109/iccd.1989.63404
Abstract
Reliability issues affecting MOS and bipolar ICs are reviewed. Hot-carrier-induced degradation of MOS and bipolar circuits are used to illustrate the potential role of reliability CAD tools. Electromigration lifetimes under pulse DC and AC current stressing are longer than previously thought. Oxide breakdown offers a case study for accelerated test modeling, defect statistics, and burn-in optimizationKeywords
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