Transient emission and generation currents in Metal-Insulator-Semiconductor capacitors

Publisher Website

31 October 1975

journal article
Published by Elsevier in Solid-State Electronics

Vol. 18 (10) , 853-857
https://doi.org/10.1016/0038-1101(75)90007-6

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Effect of temperature and voltage sweep rate on C ƒ- V characteristics of MIS capacitors
Solid-State Electronics, 1974
Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques
Solid-State Electronics, 1974
Theory of transient emission current in MOS devices and the direct determination interface trap parameters
Solid-State Electronics, 1974
Energy Levels in Neutron-Irradiated $n$ -Type Silicon
Physical Review B, 1959
Measurement of Germanium Surface States by Pulsed Channel Effect
Physical Review B, 1958