Morphology analysis in localized crystal growth and dissolution
- 1 October 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (4) , 509-517
- https://doi.org/10.1016/0022-0248(79)90133-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- {332} Ga Habit Planes Formed on GaAs during Br2 : CH 3 OH EtchingJournal of the Electrochemical Society, 1975
- Use of Modified Free Energy Theorems to Predict Equilibrium Growing and Etching ShapesJournal of Applied Physics, 1962
- Some Theorems on the Free Energies of Crystal SurfacesPhysical Review B, 1951