2 dB noise figure, 10.5 GHz LNA using SiGe bipolartechnology
- 9 December 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (25) , 2195-2196
- https://doi.org/10.1049/el:19991498
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A 6.25-GHz low DC power low-noise amplifier in SiGePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Application of SiGe heterojunction bipolar transistorsin 5.8 and 10 GHz low-noise amplifiersElectronics Letters, 1998