Application of SiGe heterojunction bipolar transistorsin 5.8 and 10 GHz low-noise amplifiers

23 July 1998

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 34 (15) , 1498-1500
https://doi.org/10.1049/el:19981019

Abstract

The development of wireless services in the 5 – 10 GHz region demands low-cost radio frequency (RF) monolithic microwave integrated circuits, with SiGe heterojunction bipolar transistors as a likely technology, combining the low cost of a mature silicon technology with excellent RF performance. These transistors are particularly attractive candidates for low-noise applications. The authors demonstrate 5.8 and 10 GHz low-noise amplifiers exhibiting a minimum noise figure of 1.6 and 3.3 dB, respectively, and a power gain above 12 dB.

Keywords

LOW-NOISE AMPLIFIERS
POWER GAIN
10 GHZ
MINIMUM NOISE FIGURE
5.8 GHZ
RF PERFORMANCE
3.3 DB
WIRELESS SERVICES
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS
HETEROJUNCTION BIPOLAR TRANSISTORS
1.6 DB

This publication has 1 reference indexed in Scilit:

SiGe heterojunction bipolar transistors—The noise perspective
Solid-State Electronics, 1997