Excitonic photoluminescence spectra of AlxGa1−xAs grown by metalorganic vapor phase epitaxy
- 25 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (12) , 1274-1276
- https://doi.org/10.1063/1.104334
Abstract
Excitonic transitions were measured in AlxGa1−xAs, grown by metalorganic vapor phase epitaxy (MOVPE), at two different alloy compositions using high resolution photoluminescence spectroscopy. The first observation is reported of an excitonic spectrum which is separated into neutral donor, ionized donor, and neutral acceptor bound exciton transitions [(D0,X), (D+,X), and (A0,X)] at an aluminum fraction higher than 20%. A significant decrease in linewidth of the (D0,X) peak is found by decreasing the excitation density and by decreasing the laser spot size. This means that the linewidths of the various excitonic transitions are, apart from alloy broadening, strongly dependent on both the long range Coulombic potentials of the ionized impurities in our samples, and on clustering effects. Finally, linewidths of 1.75 and 2.5 meV were measured for the (D0,X) transitions for samples with Al fractions of 0.12 and 0.244, respectively. These are the smallest values ever reported in literature for samples grown by MOVPE.Keywords
This publication has 15 references indexed in Scilit:
- Halogen VPE of AlGaAs for optoelectronic device applicationsJournal of Crystal Growth, 1987
- Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloysApplied Physics Letters, 1986
- Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxyApplied Physics Letters, 1986
- Summary Abstract: Optical properties of AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Low-temperature optical absorption inAs grown by molecular-beam epitaxyPhysical Review B, 1985
- Low-temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Alloy broadening in photoluminescence spectra ofPhysical Review B, 1984
- Theory of excitonic photoluminescence linewidth in semiconductor alloysApplied Physics Letters, 1984
- Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine sourceApplied Physics Letters, 1983
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978