Temperature sensitivity of oscillation wavelength in 1.3 μm-GaInAsP/InP quantum-well semiconductor lasers
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 10-11
- https://doi.org/10.1109/leos.1996.565096
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ultralow threshold and uniform operation (1.3/spl plusmn/0.09 mA) in 1.3-μm strained-MOW 10-element laser arrays for parallel high-density optical interconnectsIEEE Photonics Technology Letters, 1995
- Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasersIEEE Journal of Quantum Electronics, 1994
- The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasersIEEE Journal of Quantum Electronics, 1983
- Electroreflectance study of InGaAsP quaternary alloys lattice matched to InPIEEE Journal of Quantum Electronics, 1981